temperature coefficient of resistance
英 [ˈtemprətʃə(r) ˌkəʊɪˈfɪʃnt ɒv rɪˈzɪstəns]
美 [ˈtemprətʃər ˌkoʊɪˈfɪʃnt əv rɪˈzɪstəns]
网络 电阻温度系数; 温度系数
双语例句
- From resistance-temperature ( R-T) measurement and calculation, it is found that both R and temperature coefficient of resistance ( TCR) of the films are increased after annealing.
电阻温度特性测试表明，退火后薄膜的电阻（R）和电阻温度系数（TCR）都明显增大。 - Negative Temperature Coefficient of Resistance of Nb-doped SnO_2 Ceramics
铌掺杂氧化锡陶瓷的电阻负温度系数特性 - The Application of Temperature Coefficient of Resistance on Reliability Early Detection
电阻温度系数研究及其在可靠性早期监测中的应用 - The temperature coefficient of resistance ( TCR) of these samples have been studied.
多晶材料，研究了它们的电阻温度系数（TCR）。 - As the detecting material of uncooled infrared detectors, vanadium oxide ( VOX) thin films need high temperature coefficient of resistance ( TCR) and suitable film resistance for using of the device.
氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。 - Hydrothermal Synthesis and Characterization of the Perovskite Niobates; Negative Temperature Coefficient of Resistance of Nb-doped SnO_2 Ceramics
钙钛矿型铌复合氧化物的水热合成及表征铌掺杂氧化锡陶瓷的电阻负温度系数特性 - It is the key for the devices to select the film for material with large temperature coefficient of resistance and the detector structure of good thermal isolation ( i.e. bridge structure).
指出了选用具有大的电阻温度系数的膜电阻材料和优良的热绝缘结构（如桥式结构）是研制器件的关键。 - Investigation on Temperature Coefficient of Resistance in La_ ( 0.7-x) Gd_xSr_ ( 0.3) MnO_3 System
La（0.7-x）GdxSr（0.3）MnO3体系的电阻温度系数研究 - The temperature coefficient of resistance with tempering temperature and its relationship with non-crystallinity was studied.
研究了这一合金薄膜电阻温度系数TCR随热处理温度的变化以及它与非晶度的关系。 - For high nitrogen Cr Si Ni N films in comparison with low nitrogen Cr Si Ni N films, the variation of electrical resistance was smaller during the heat treatment, and the higher annealing temperatures was needed to obtain a small temperature coefficient of resistance ( TCR).
与低氮含量CrSiNiN薄膜相比，高氮含量CrSiNiN薄膜的电阻值在热处理过程中变化较小、欲获得较小电阻温度系数（TCR）需要更高的退火温度。 - The test results indicate that there is significant difference between transition temperature, hysteresis width and temperature coefficient of resistance of the films prepared by the two methods.
对两种方法制备薄膜的性能测试结果表明，其转换温度、相变滞豫、热电阻温度系数等都有较大差别。 - Test of Temperature Coefficient of Resistance for Room Temperature IR Detection Thin Film
室温红外探测薄膜电阻温度系数测试技术 - The temperature coefficient of resistance is measured and over heat ratios with various input powers are determined.
测量了热膜的电阻温度系数，确定了热膜处于不同输入功率下的过热比。 - Study on Temperature Coefficient of Resistance of BaTiO_3 PTCR Ceramics
BaTiO3PTCR陶瓷阻温系数的研究 - C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.
根据薄膜理论和工艺实验，采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化，获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜，与块材接近，实现了锰铜压力传感器的薄膜化。 - The test results show that the platinum film resistor temperature sensors on polyimide substrates exhibit excellent linearity and the temperature coefficient of resistance is close to 0.0023/ ℃.
试验表明聚酰亚胺衬底上的铂薄膜热敏电阻与温度的变化具有良好的线性，其电阻温度系数达0.0023/℃。 - Measuring principle and sensitivity of non-balanced bridge is analyzed. A method of measuring temperature coefficient of resistance by this bridge has been discussed in this paper result is accurate.
本文分析了非平衡电桥的测量原理及灵敏度，提出了一种测量电阻温度系数的方法，实测结果说明该方法是正确的。 - The trend of new technique for manufacturing Ni-Cr alloy thin film with a combination of characteristics: high resistivity, low temperature coefficient of resistance ( CR), large gauge factor, and good thermal stability is presented.
阐明了制备具有高电阻率、低电阻温度系数、高应变灵敏系数、良好的热稳定性等优异综合性能的镍铬合金薄膜的新工艺发展趋势。 - Microstructures, temperature coefficient of resistance, temperature stability and the micromachining of the TiN_X thin films were investigated into details.
重点研究了薄膜的微观结构、电阻温度系数、电阻温度稳定性、薄膜的微加工等性质。 - The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped.
结果表明，适量的Ag掺杂对材料的室温电阻率（r）影响不大，并且还可以有效提高PTCR陶瓷的温度系数（aR）和耐电压（Vb）。 - The vanadium oxide thin film has high temperature coefficient of resistance at near room temperature which is prepared by ion beam sputtering.
采用离子束溅射法制备了在室温附近具有高TCR氧化钒薄膜。 - The resistivity, squared resistance and temperature coefficient of resistance in hydrogenated silicon film decrease with the increasing of boron doping concentration.
通过研究硼掺杂浓度与氢化硅薄膜电学特性关系表明硼掺杂降低了薄膜的电阻率和方阻值，同时也降低了薄膜的温度电阻系数。 - And then we got Temperature Coefficient of Resistance of platinum sensor that has been made by analyzing Temperature resistance formula of platinum sensor.
其次对于Pt传感器温度电阻公式进行分析测得所制作的Pt传感器的电阻温度系数。 - Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance ( TCR).
氧化钒薄膜由于具有高电阻温度系数（TCR），近年来被广泛应用于非制冷红外探测及红外成像领域。 - In addition, with the sputtering power reduced the temperature coefficient of resistance of the films gradually become smaller.
另外，随着功率的减小，薄膜的电阻温度系数逐渐变小。 - And then, photolithography and wet etching were used to pattern the ITO films for electrical measurement, which involved the measurement of temperature coefficient of resistance and the gauge factor.
然后用光刻和刻蚀的方法制作电学测试所需的图形。对于ITO薄膜的电学测试包括对其电阻温度系数和响应因子的测量两部分。 - TaN thin films possess wide resistively, low temperature coefficient of resistance and chemical inert properties, which can be widely used in microwave power resistors.
TaN薄膜具有宽电阻率、低电阻温度系数以及自钝化特性而被广泛应用于微波功率电阻器中。 - Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR) VOx, nitrogen-doped vanadium oxide and gold black of high infrared absorption, respectively.
通过制备具有高电阻温度系数（TCR）的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上，提高了微测辐射热计的性能。